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PDF STB7ANM60N Data sheet ( Hoja de datos )

Número de pieza STB7ANM60N
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STB7ANM60N Hoja de datos, Descripción, Manual

STB7ANM60N,
STD7ANM60N
Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh™ II
2
Power MOSFETs in D PAK and DPAK packages
Datasheet - production data
Features
TAB
2
3
1
D 2 PAK
TAB
3
1
DPAK
Order codes VDS @ Tjmax RDS(on) max. ID
STB7ANM60N
STD7ANM60N
650 V
0.9 Ω
5A
Designed for automotive applications and
AEC-Q101 qualified
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1. Internal schematic diagram
' Ć7$%
Applications
Switching applications
Description
* 
6 
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Order codes
STB7ANM60N
STD7ANM60N
Table 1. Device summary
Marking
Packages
7ANM60N
2
D PAK
DPAK
Packaging
Tape and reel
December 2013
This is information on a product in full production.
DocID023350 Rev 2
1/20
www.st.com

1 page




STB7ANM60N pdf
STB7ANM60N, STD7ANM60N
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 5 A, VGS = 0
- 5A
- 20 A
- 1.3 V
trr Reverse recovery time
- 213
Qrr Reverse recovery charge
ISD = 5 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 20)
-
1.5
IRRM Reverse recovery current
- 14
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
- 265
- 1.8
- 14
ns
μC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID023350 Rev 2
5/20
20

5 Page





STB7ANM60N arduino
STB7ANM60N, STD7ANM60N
Package mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Table 9. D²PAK (TO-263) mechanical data
mm
Min.
Typ.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
2.54
4.88
15
2.49
2.29
1.27
1.30
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
DocID023350 Rev 2
11/20
20

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