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PDF AON7202 Data sheet ( Hoja de datos )
| Número de pieza | AON7202 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON7202
30V N-Channel MOSFET
General Description
The AON7202 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
40A
< 5mΩ
< 6.8mΩ
DFN 3x3 EP
Top View
Bottom View
Top View
Pin 1
1
2
3
4
8
7
6
G
5
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
40
31
150
20
16
38
72
36
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
2.8
Max
40
75
3.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: Feb 2010
www.aosmd.com
Page 1 of 6
1 page  
AON7202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
40
TA=25°C
100
TA=150°C
TA=100°C
TA=125°C
30
20
10
10 0
1
10
100
1000
0 25 50 75 100 125 150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
50
40
30
20
10
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001 0.001
0.1
10 1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 1: Feb 2010
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON7202.PDF ] | |
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