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PDF PG03EAESM Data sheet ( Hoja de datos )
| Número de pieza | PG03EAESM | |
| Descripción | TVS Diode | |
| Fabricantes | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
PG03EAESM
TVS Diode for ESD
Protection in Portable Electronics
E
B
2
13
DIM MILLIMETERS
A 1.60+_ 0.10
D B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+0.10/-0.05
E 1.60+_ 0.10
G 1.00+_ 0.10
H 0.50
J 0.13+_ 0.05
J
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
1. (TVS) D1 CATHODE
2. (TVS) D2 CATHODE
3. COMMON ANODE
ESM
Marking
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Junction Temperature
Storage Temperature
SYMBOL
PPK
IPP
Tj
Tstg
RATING
60
5
150
-55 150
UNIT
W
A
Type Name
E1
3
D2 D1
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
VRWM
VBR
IR
VC(1)
VC(2)
CJ
TEST CONDITION
-
It=5mA
VRWM=3V
IPP=1A, tp=8/20 s
IPP=5A, tp=8/20 s
VR=0V, f=1MHz
MIN.
-
5.32
-
-
-
-
TYP.
-
-
-
-
-
35
MAX.
3
5.88
5.0
10
15
45
UNIT
V
V
A
V
V
pF
2007. 5. 25
Revision No : 2
1/2
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| PDF Descargar | [ Datasheet PG03EAESM.PDF ] | |
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