|
|
Numéro de référence | ZUMT591 | ||
Description | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (IC)
APPLICATIONS
* Ideally suited for space / weight critical applications
ZUMT591
CE
B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-80
V IC=-100µA, IE=-0
Collector-Emitter
Breakdown Voltage
VCEO(sus)
-60
V IC=-10mA*, IB=-0
Emitter-Base Breakdown V(BR)EBO
Voltage
-5
V IE=-100µA, IC=-0
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-100
-100
-100
-0.3
-0.6
-1.2
nA
nA
nA
V
V
V
VCB=-60V
VCE=-60V
VEB=-4V, IC=-0
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn On Voltage
VBE(on)
-1.0 V
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
IC=-1A, VCE=-5V*
|
|||
Pages | Pages 2 | ||
Télécharger | [ ZUMT591 ] |
No | Description détaillée | Fabricant |
ZUMT591 | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | Zetex Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |