(PDF) KDV804KS Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDV804KS
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. FEATURES Low Series Resistance : rs=0.3(TYP.). Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE CAPACITANCE(C2V) UNIT B 43 44.5 pF C 44 45.5 KDV804KS VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 P7 Q 0.1 MAX M 1. ANODE 1 2. ANODE 2 3. CATHODE 3 21 SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C2V C8V Capacitance Ratio C2V/C8V Series Resistance rS TEST CONDITION IR=10 A VR=15V VR=2V, f=1MHz VR=8V, f=1MHz C=38pF, f=100MHz MIN. 15 - 43 24 1.74 - TYP. - - - - - 0.3 MAX. - 50 45.5 28.8 1.85 0.4 UNIT V nA pF 2011. 5. 3 Revision No : 1 1/2 1 page

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PDF KDV804KS Data sheet ( Hoja de datos )