(PDF) KDV365F Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDV365F
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. Small Package : TFSC. KDV365F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS 1.00+_ 0.05 0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05 0.40 MAX 0.13+_ 0.05 Marking Type Name TFSC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio Series Resistance IR1 IR2 C1V C4V C1V/C4V rS ESD Capability * * Failure criterion : IR 20nA at VR=10V. TEST CONDITION VR=10V VR=10V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz - VR=4V, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse. MIN. - - 27.05 6.05 3.0 - TYP. - - - - - - MAX. 10 100 28.55 7.55 - 1.5 UNIT nA pF - 200 - - 2004. 10. 6 Revision No : 0 1/2 1 page

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PDF KDV365F Data sheet ( Hoja de datos )