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KDV269E fiches techniques PDF

KEC - SILICON EPITAXIAL PLANAR DIODE

Numéro de référence KDV269E
Description SILICON EPITAXIAL PLANAR DIODE
Fabricant KEC 
Logo KEC 





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KDV269E fiche technique
SEMICONDUCTOR
TECHNICAL DATA
CATV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=11.0(Min.)
Low Series Resistance : rS=0.75 (Max.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
34
125
-55 125
UNIT
V
KDV269E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.) 0.02
C(Min.)
(VR=2~25V)
TEST CONDITION
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
-
29
2.5
11.0
-
TYP.
-
31.5
2.75
11.5
-
MAX.
10
34
2.9
-
0.75
UNIT
nA
pF
pF
-
Marking
Type Name
UR
2014. 3. 31
Revision No : 3
1/2

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