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PYA28C64B fiches techniques PDF

PYRAMID - STATIC CMOS RAM

Numéro de référence PYA28C64B
Description STATIC CMOS RAM
Fabricant PYRAMID 
Logo PYRAMID 





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PYA28C64B fiche technique
FEATURES
Access Times of 150, 200, 250 and 350ns
Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS:
- 40 mA Active Current
- 100 µA Standby Current
Fast Write Cycle Times
PYA28C64B
8K x 8 EEPROM
Software Data Protection
CMOS & TTL Compatible Inputs and Outputs
Endurance:
- 100,000 Write Cycles
Data Retention: 10 Years
Available in the following packages:
– 28-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28C64B is a 5 Volt 8Kx8 EEPROM. The device
supports 64-byte page write operation. The PYA28C64B
features DATA and Toggle Bit Polling to indicate early
completion of a Write Cycle. The device also includes
user-optional software data protection. Data Retention is
10 Years. The device is available in a 28-Pin 600 mil wide
Ceramic DIP and 32-Pin LCC.
Functional Block Diagram
Pin Configuration
Document # EEPROM111 REV 02
DIP (C5-1)
LCC (L6)
Modified April 2015

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