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PYA28HC256 fiches techniques PDF

PYRAMID - STATIC CMOS RAM

Numéro de référence PYA28HC256
Description STATIC CMOS RAM
Fabricant PYRAMID 
Logo PYRAMID 





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PYA28HC256 fiche technique
FEATURES
Access Times of 70, 90 and 120ns
Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS:
- 80 mA Active Current
- 3 mA Standby Current
Fast Write Cycle Times
PYA28HC256
HIGH SPEED 32K x 8 EEPROM
Software Data Protection
CMOS & TTL Compatible Inputs and Outputs
Endurance:
- 10,000 Write Cycles
- 100,000 Write Cycles (optional)
Data Retention: 10 Years
Available in the following package:
– 28-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28HC256 is a 5 Volt 32Kx8 EEPROM. The device
supports 64-byte page write operation. The PYA28HC256
features DATA and Toggle Bit Polling as well as a system
software scheme used to indicate early completion of a
Write Cycle. The device also includes user-optional soft-
ware data protection. Data Retention is 10 Years. The
device is available in a 28-Pin 600 mil wide Ceramic DIP
and 32-Pin LCC.
Functional Block Diagram
Pin Configuration
Document # EEPROM106 REV 03
DIP (C5-1)
LCC (L6)
Revised October 2014

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