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Taiwan Semiconductor - Schottky Barrier Rectifier ( Diode )

Numéro de référence SR009
Description Schottky Barrier Rectifier ( Diode )
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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SR009 fiche technique
CREAT BY ART
Schottky Barrier Rectifier
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
SR002 thru SR010
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.33g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SR SR SR SR SR SR
SYMBOL
002 003 004 005 006 009
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
20 30 40 50 60 90
14 21 28 35 42 63
20 30 40 50 60 90
0.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
SR
010
100
70
100
Maximum instantaneous forward voltage (Note 1)
@ 0.5 A
VF 0.55 0.70 0.85
Maximum reverse current @ rated VR
TJ=25
TJ=100
TJ=125
IR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Cj
RθJA
TJ
TSTG
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
0.5 0.1
10 5 -
- -2
110
- 55 to +125
80 65
50
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
mA
pF
OC/W
OC
OC
Document Number: DS_D1308043
Version: F13

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