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PDF L8413 Data sheet ( Hoja de datos )
| Número de pieza | L8413 | |
| Descripción | HIGH POWER CW LASER DIODE with PELTIER-COOLING | |
| Fabricantes | Hamamatsu Corporation | |
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PRELIMINARY DATA
HIGH POWER CW LASER
DIODE with PELTIER-COOLING
L8413
Compact Peltier-cooling type
FEATURES
High optical power : 20 W/bar
High stability
Long life
High cost performance
Compact
APPLICATIONS
Pumping source for solid state lasers
Materials processing
Welding
Soldering
Medical systems
High power laser diodes with a Peltier cooler feature several advantages such as high stability with long life and high
cost performance with compact structure. Sinve they are designed to be small, they are easily applied as light source to
pump solid state lasers, for material processing like welding or soldering, and for medical systems. The lasing areas
consist of small laser emitters arranged in line and are thus called “Bar” structure. By stacking Bars as a module, a high
power CW operation can be achieved. Water-cooling and Funryu-cooling (patent pending : Japan 8-139479, WO
00/11717) are also available. And focusing lens is available as an option.
ABSOLUTE MAXIMUM RATINGS (Each bar)
Parameter
Symbol
Radiant Output Power / bar
Reverse Voltage
Operating Temperature
Storage Temperature
Φe
Vr
Top(c)
Tstg
Value
22
2
+5 to +35
-20 to +40
Unit
W
V
°C
°C
CHARACTERISTICS (Each bar, Top(c) = 20 °C)
Parameter
Radiant Output Power / bar
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Array Length
Symbol
Φe
λp
∆λ
Vf
θ//
θ⊥
Ith
-
Conditions
If = 25 A
Φe = 15 W
Φe = 15 W
Φe = 15 W
FWHM
*Contact sales stuff for emitting wave-length and radiant output power (Φe) other than above.
Value
20
808
4.0
1.8
10
35
10
10
Unit
W
nm
nm
V
° (degree)
° (degree)
A
mm
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
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