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PDF KTD1415V Data sheet ( Hoja de datos )
| Número de pieza | KTD1415V | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTD1415V
EPITAXIAL PLANAR NPN TRANSISTOR
INDUSTRIAL USE.
HIGH POWER SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A.
Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
100
100
5
7
0.2
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
BASE
=~ 5KΩ
=~ 150Ω
COLLECTOR
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
TEST CONDITION
VCB=100V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
VCE=3V, IC=3A
VCE=3V, IC=7A
IC=3A, IB=6mA
IC=7A, IB=14mA
IC=3A, IB=6mA
20µS INPUT I B1
IB1 IB2
IB2
I B1 =-I B2 =6mA
DUTY CYCLE 1%
OUTPUT
15Ω
VCC =45V
MIN.
-
-
100
2000
1000
-
-
-
TYP.
-
-
-
-
-
0.9
1.2
1.5
MAX.
100
3.0
-
15000
-
1.5
2.0
2.5
UNIT
A
mA
V
V
V
- 0.8 -
- 3.0 -
S
- 2.5 -
2007. 5. 22
Revision No : 1
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTD1415V.PDF ] | |
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