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PDF DMC1229UFDB Data sheet ( Hoja de datos )

Número de pieza DMC1229UFDB
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC1229UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Device
V(BR)DSS
Q1
N-Channel
12V
Q2
P-Channel
-12V
RDS(ON) max
29m@ VGS = 4.5V
34m@ VGS = 2.5V
44m@ VGS = 1.8V
65m@ VGS = 1.5V
61m@ VGS = -4.5V
81m@ VGS = -2.5V
115m@ VGS = -1.8V
170m@ VGS = -1.5V
ID MAX
TA = +25°C
5.6A
5.1A
4.5A
3.7A
-3.8A
-3.3A
-2.8A
-2.3A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Type B
S2
G2
D2
D1
D2
G1
S1
Pin1
Bottom View
D1
D1 D2
G1 G2
S1 S2
N-CHANNEL MOSFET P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMC1229UFDB -7
DMC1229UFDB -13
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
DMC1229UFDB
Document number: DS36128 Rev. 4 - 2
D2 = Product Type Marking Code
YM = Date Code Marking
D2 Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
1 of 9
www.diodes.com
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
September 2013
© Diodes Incorporated

1 page




DMC1229UFDB pdf
1
0.9
0.8
0.7
0.6 ID = 1mA
ID = 250µA
0.5
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
DMC1229UFDB
20
18
16
14
12
10 TA = 25°C
8
6
4
2
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
DMC1229UFDB
Document number: DS36128 Rev. 4 - 2
5 of 9
www.diodes.com
September 2013
© Diodes Incorporated

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