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PDF DMC1028UFDB Data sheet ( Hoja de datos )
| Número de pieza | DMC1028UFDB | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMC1028UFDB
Product Summary
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Device
BVDSS
Q1
N-Channel
12V
Q2
P-Channel
-20V
Description
RDS(ON) max
25mΩ @ VGS = 4.5V
30mΩ @ VGS = 3.3V
32mΩ @ VGS = 2.5V
80mΩ @ VGS = -4.5V
90mΩ @ VGS = -3.3V
100mΩ @ VGS = -2.5V
ID max
TA = +25°C
6.0A
5.5A
5.3A
-3.4A
-3.2A
-3.0A
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD HBM Protected up to 1.5KV, MM Protected up to 150V.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Optimized for Point of Load (POL) Synchronous Buck Converter that
steps down from 3.3V to 1V for core voltage supply to ASICs. Target
applications are Ethernet Network Controllers used in:
Routers, Switchers, Network Interface Controllers (NICs)
Digital Subscriber Line (DSL)
Set-Top Boxes (STBs)
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
D1 D2
ESD PROTECTED
U-DFN2020-6 (Type B)
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMC1028UFDB-7
U-DFN2020-6 (Type B)
3,000/Tape & Reel
DMC1028UFDB-13
U-DFN2020-6 (Type B)
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
D8 = Product Type Marking Code
D8 YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
1 of 10
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
May 2015
© Diodes Incorporated
1 page  
DMC1028UFDB
Typical Characteristics - N-CHANNEL (continued)
0.05
0.045
0.04
0.035
0.03
VGS = 1.8V, ID = 3A
0.025
0.02
0.015
0.01
VGS = 4.5V, ID = 10A
0.005
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
20
18 VGS = 0V
16
14
12 TA = 125oC
10
8 TA = -55oC
6 TA = 150oC
4
TA = 25oC
2 TA = 85oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
1.5
6
1.2
1.1
1
0.9
0.8
ID = 1mA
0.7
0.6
0.5
0.4 ID = 250µA
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Theshold Variation vs Junction
Temperature
10000
f=1MHz
1000
100
Ciss
Coss
Crss
10
0
100
2 4 6 8 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
12
RDS(ON)
Limited
10
4
VDS = 6V, ID = 6.8A
2
0
0 2 4 6 8 10 12 14 16 18 20
Qg (nC)
Fiure 11 Gate Charge
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
1 DC
PW =10s
PW =1s
0.1 TJ(Max)=150℃ PW =100ms
TA=25℃
PW =10ms
VGS=4.5V
Single Pulse
PW =1ms
DUT on 1*MRP Board PW =100µs
0.01
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
5 of 10
www.diodes.com
May 2015
© Diodes Incorporated
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