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Thinki Semiconductor - 10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers

Numéro de référence UGF1008GS
Description 10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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UGF1008GS fiche technique
UGF1004GS thru UGF1008GS
®
UGF1004GS thru UGF1008GS
Pb Free Plating Product
Pb
10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with ultra fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Insulated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "G"
Suffix "GA"
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL UGF1004GS UGF1005GS UGF1006GS UGF1007GS UGF1008GS UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 2)
IF= 5 A
Maximum reverse current @ rated VR TJ=25
TJ=125
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
Trr
RθJC
TJ
TSTG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
200 300 400
140 210 280
200 300 400
10
70
0.95 1.25
20
- 55 to +175
- 55 to +175
10
100
6.0
500 600
350 420
500 600
1.70
25
- 55 to +150
- 55 to +150
V
V
V
A
A
V
μA
ns
oC/W
oC
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/

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