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Numéro de référence | FDPF7N60NZ | ||
Description | N-Channel MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
March 2013
FDP7N60NZ / FDPF7N60NZ
N-Channel UniFETTM II MOSFET
600 V, 6.5 A, 1.25
Features
• RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 7 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
G
D
S
TO-220
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N60NZ FDPF7N60NZ
600
±30
6.5 6.5*
3.9 3.9*
26 26*
275
6.5
14.7
10
147 33
1.2 0.26
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C0
1
FDP7N60NZ
0.85
0.5
62.5
FDPF7N60NZ
3.8
-
62.5
Unit
oC/W
www.fairchildsemi.com
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Pages | Pages 10 | ||
Télécharger | [ FDPF7N60NZ ] |
No | Description détaillée | Fabricant |
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