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NXP Semiconductors - NPN power transistor

Numéro de référence BUJ303AD
Description NPN power transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BUJ303AD fiche technique
BUJ303AD
NPN power transistor
Rev. 1 — 2 September 2011
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT428
(DPAK) surface mountable plastic package.
1.2 Features and benefits
Fast switching
Low thermal resistance
Surface mountable package
Very high voltage capability
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
High frequency electronic lighting
ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
IC
Quick reference data
Parameter
collector current
Ptot
VCESM
total power dissipation
collector-emitter peak
voltage
Static characteristics
hFE DC current gain
Conditions
see Figure 1; see Figure 2;
see Figure 4
Tmb 25 °C; see Figure 3
VBE = 0 V
IC = 5 mA; VCE = 5 V;
Tmb = 25 °C; see Figure 11
IC = 500 mA; VCE = 5 V;
Tmb = 25 °C; see Figure 11
Min Typ Max Unit
- - 5A
- - 80 W
- - 1000 V
10 22 30
14 25 35

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