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RF Micro Devices - Medium Power Discrete SiGe Transistor

Numéro de référence SGA9189Z
Description Medium Power Discrete SiGe Transistor
Fabricant RF Micro Devices 
Logo RF Micro Devices 





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SGA9189Z fiche technique
SGA9189Z
Medium Power
Discrete SiGe
Transistor
SGA9189Z
Medium Power Discrete SiGe Transistor
Package: SOT-89
Product Description
RFMD’s SGA9189Z is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
RF device is based on a silicon germanium heterostructure bipolar transistor (SiGe
HBT) process. The SGA9189Z is cost-effective for applications requiring high linear-
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Typical Gmax, OIP3, P1dB @ 5V,180mA
25 44
23
OIP3
42
21 40
19 38
17
Gmax
15
36
34
13 32
11 30
9
P1dB
28
7 26
5 24
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Features
50MHz to 3000MHz Operation
39dBm Output IP3 Typ. at
1.96GHz
12.2dB Gain Typ. at 1.96GHz
25.5dBm P1dB Typ. at 1.96GHz
2.1dB NF Typ. at 0.9GHz
Cost-Effective
3V to 5V Operation
Applications
Wireless Infrastructure Driver
Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 Contains Detailed Appli-
cation Circuits
Parameter
Maximum Available Gain
Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Min.
17.5
11.2
23.5
Specification
Typ.
20.5
13.2
19.0
12.2
40
25.5
40.0
Max.
20.5
13.2
36.5
39.0
Noise Figure
2.1
2.6
DC Current Gain
100 180 300
Breakdown Voltage
Thermal Resistance
Device Operating Voltage
7.5 8.5
47
5.5
Operating Current
155 180 195
Test Conditions: VCE = 5V, ICQ = 180mA (unless otherwise noted), TL = 25°C.
[1] 100% Tested [2] Sample Tested
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
V
°C/W
V
mA
Condition
900MHz, ZS = ZS*, ZL = ZL*
1960MHz
900MHz [1], ZS = ZSOPT, ZL = ZLOPT
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT, POUT = +10dBm
per tone
1960MHz [2]
900MHz, ZS = ZSOPT, ZL = ZLOPT
1960MHz
collector - emitter
junction - lead
collector - emitter
DS121018
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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