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SGB-2233Z fiches techniques PDF

RF Micro Devices - DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK

Numéro de référence SGB-2233Z
Description DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK
Fabricant RF Micro Devices 
Logo RF Micro Devices 





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SGB-2233Z fiche technique
PreliminarySGB-2233(Z)
DC to 4.5GHz
Active Bias
Gain Block
SGB-2233(Z)
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB-2233
product is designed for high linearity 3V gain block applications that require small
size and minimal external components. It is on chip matched to 50Ω and an exter-
Optimum Technology nal bias inductor choke is required for the application band.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
9 SiGe HBT
GaAs pHEMT
Active
NC Bias
NC
NC
NC
Si CMOS
RFIN
RFOUT
Si BJT
GaN HEMT
NC
NC
InP HBT
RF MEMS
LDMOS
Features
„ High Reliability SiGe HBT
Technology
„ Robust Class 1C ESD
„ Simple and Small Size
„ P1dB=6.7dBm at 1950MHz
„ IP3=19.0dBm at 1950MHz
„ Low Thermal
Resistance = 221 C/W
Applications
„ 3V Battery Operated Applica-
tions
„ LO Buffer Amp
„ RF Pre-Driver and RF Receive
Path
Parameter
Specification
Min. Typ.
Small Signal Gain
13.9
11.4
12.9
12.5
Output Power at 1dB Compression
7.9
5.2 6.7
6.4
Output Third Order Intercept Point
20.5
16.5
19.0
19.0
Noise Figure
4.2
Frequency of Operation
DC
Input Return Loss
13.5
19.5
Output Return Loss
12.7
16.7
Current
21.0
25.0
Thermal Resistance
221
Test Conditions: Z0=50Ω, VCC=3V, IC=25mA, T=30°C
Max.
14.4
5.2
4500
29.0
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
dB
dB
mA
°C/W
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
Condition
1950 MHz
1950 MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103079 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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