DataSheetWiki


SPF5122Z fiches techniques PDF

RF Micro Devices - GaAs pHEMT LOW NOISE MMIC AMPLIFIER

Numéro de référence SPF5122Z
Description GaAs pHEMT LOW NOISE MMIC AMPLIFIER
Fabricant RF Micro Devices 
Logo RF Micro Devices 





1 Page

No Preview Available !





SPF5122Z fiche technique
SPF5122Z
50MHz to
4000 MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
SPF5122Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
Product Description
The SPF5122Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF5122Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and NF versus Frequency
Broadband Application Circuit (5V, 90mA)
25.0
4.00
22.0
3.50
19.0
3.00
16.0
2.50
13.0
2.00
10.0
1.50
7.0 1.00
4.0 Gain 0.50
NF
1.0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Features
Ultra-Low Noise Figure=0.60dB
at 900MHz
Gain=18.9dB at 900MHz
High Linearity: OIP3=40.5dBm
at 1900MHz
Channel Power=13.4dBm (-
65dBc IS95 ACPR, 880MHz)
P1dB=23.4dBm at 1900MHz
Single-Supply Operation: 5V at
IDQ = 90 mA
Flexible Biasing Options: 3-5V,
Adjustable Current
Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
PA Driver Amplifier
Low Noise, High Linearity Gain
Block Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Power Gain
17.2
18.9
20.2
dB 0.9GHz
11.2
12.2
14.4 dB 1.96GHz
Output Power at 1dB Compression
20.8
22.8
dBm
0.9 GHz
21.4
23.4
dBm
1.9 GHz
Output Third Order Intercept Point
35.1
38.1
dBm
0.9 GHz
37.2 40.5
dBm
1.9 GHz
Noise Figure
0.59
0.85
dB 0.9GHz
0.65
0.9 dB 1.9GHz
Input Return Loss
10 14.3
dB 0.9 GHz
21 dB 1.9GHz
Output Return Loss
14 17
dB 0.9GHz
13 dB 1.9GHz
Reverse Isolation
24.1 dB 0.9GHz
18.4
dB 1.9GHz
Device Operating Voltage
5.00
5.25
V
Device Operating Current
75 90 105 mA Quiescent
Thermal Resistance
65
°C/W
Junction to lead
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS=ZL=50, 25°C, Broadband Application Circuit
DS110408
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 12

PagesPages 12
Télécharger [ SPF5122Z ]


Fiche technique recommandé

No Description détaillée Fabricant
SPF5122Z GaAs pHEMT LOW NOISE MMIC AMPLIFIER RF Micro Devices
RF Micro Devices

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche