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RF Micro Devices - GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER

Numéro de référence SPF5344Z
Description GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER
Fabricant RF Micro Devices 
Logo RF Micro Devices 





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SPF5344Z fiche technique
SPF5344Z
0.8GHz to
4GHz, GaAs
pHEMT 2-
Stage Low
Noise MMIC
Amplifier
SPF5344Z
0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW
NOISE MMIC AMPLIFIER
Product Description
The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed
for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in
a gain block configuration. Its single-supply operation and integrated
matching networks make implementation remarkably simple. The off-chip
interstage choke and DC block allow for optimum performance tuning.
Gain, RL & NF versus Frequency
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
30
S21
20
10
0
NF
-10
-20 S11
-30
-40
1.7 1.8 1.9 2.0 2.1 2.2
Frequency (GHz)
1.75
Gain
IRL
ORL
NF
1.50
1.25
1.00
0.75
0.50
S22 0.25
0.00
2.3 2.4 2.5
Features
Low Noise Figure=0.80dB at
2.0 GHz
Gain=24.5dB at 2.0GHz
OIP3=39dBm at 2.0GHz
Excellent Return Loss:
S11>20dB, S22>20dB at
2.0 GHz
P1dB=22.4dBm at 2.0GHz
Single-Supply Operation: 5V at
Idq = 120 mA
Flexible Biasing Options: 3-5V,
Adjustable Current
Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
PA Driver Amplifier
Low Noise, High Linearity Gain
Block Applications
Parameter
Frequency = 0.9 GHz
Min. Typ. Max.
Frequency = 2.0 GHz
Min. Typ. Max.
Frequency = 2.2 GHz
Min. Typ. Max.
Unit
Small Signal Power Gain
34.5
22.1 24.5 26.9
22.5
dB
Noise Figure
0.70
0.80
0.90
dB
Output Third Order
Intercept Point
35.5
35 39.0
39.0
dBm
Output Power at 1dB
Compression
21.8
22.4
22.7
dBm
Input Return Loss
25.0
dB
Output Return Loss
25.0
dB
Reverse Isolation
32.5
dB
Device Operating Voltage
5.0
5.0
5.0 V
Device Operating Current 100 120 160 100 120 160 100 120 160 mA
(Quiescent)
Thermal Resistance
65
65
65 °C/W
(junction-to-lead)
1st stage
Thermal Resistance
65
65
65 °C/W
(junction-to-lead)
2nd stage
Note: VD=5.0V, IDQ=120mA OIP3 Tone Spacing=1MHz, POUT per tone=0dBm and ZS=ZL=50, 25°C, Application Circuit Data.
The typical noise figure values include evaluation board losses.
Condition
DS110805
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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