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Numéro de référence | KDV154 | ||
Description | SILICON EPITAXIAL PLANAR DIODE | ||
Fabricant | KEC | ||
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1 Page
SEMICONDUCTOR
TECHNICAL DATA
TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
VR
Tj
Tstg
RATING
20
150
-55 150
UNIT
V
KDV154
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
1
2
D
MM
1. ANODE
2. CATHODE
G
H
J
C
I
DIM MILLIMETERS
A 2.50+_ 0.2
B 1.25+_ 0.05
C 0.90+_ 0.05
D 0.30 +_ 0.06
E 1.70 +_ 0.05
F 0.27 +_ 0.10
G 0.126+_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15+_ 0.05
K 0.4
L 2 +4/-2
M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
VR
IR
C2V
C10V
C2V/20V
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=20V
VR=2V, f=1MHz
VR=10V, f=1MHz
VR=5V, f=470MHz
MIN.
20
-
13.90
4.5
2.5
-
TYP.
-
-
-
-
-
-
MAX.
-
10
16.10
6.0
-
0.6
UNIT
V
nA
pF
pF
CLASSIPICATION OF CAPACITANCE GRADE
GRADE
CAPACITANCE(C2V)
UNIT
A 13.90 15.00
B 14.50 15.40
pF
C 14.90 15.90
D 15.40 16.10
Marking
Type Name
A
Grade Lot No.
2014. 3. .31
Revision No : 6
1/2
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Pages | Pages 2 | ||
Télécharger | [ KDV154 ] |
No | Description détaillée | Fabricant |
KDV152 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) | KEC(Korea Electronics) |
KDV152M | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) | KEC(Korea Electronics) |
KDV153 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF/UHF TUNER AFC VCO FOR UHF BAND RADIO) | KEC(Korea Electronics) |
KDV153 | SILICON EPITAXIAL PLANAR DIODE | KEC |
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