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84N06CLD Datasheet دیتاشیت PDF دانلود

دیتاشیت - Renesas - N-CHANNEL POWER MOS FET

شماره قطعه 84N06CLD
شرح مفصل N-CHANNEL POWER MOS FET
تولید کننده Renesas 
آرم Renesas 


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84N06CLD شرح
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N06CLD, NP84N06DLD, NP84N06ELD
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 6.5 mMAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 9.5 mMAX. (VGS = 5 V, ID = 35 A)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP84N06CLD
TO-220AB
NP84N06DLD
TO-262
NP84N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0)
VDSS
60
Gate to Source Voltage (VDS = 0)
VGSS
±20
Drain Current (DC) Note1
ID(DC)
±84
Drain Current (Pulse) Note2
ID(pulse)
±280
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C)
PT2
185
Channel Temperature
Tch 175
Storage Temperature
Tstg -55 to +175
Single Avalanche Current Note3
IAS Figure4
Single Avalanche Energy Note3
EAS Figure4
Repetitive Avalanche Current Note4
IAR
70
Repetitive Avalanche Energy Note4
EAR
490
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
Notes 1.
2.
3.
4.
Package Limit = ± 75 A
PW 10 µs, Duty cycle 1 %
Starting Tch = 25°C, RG = 25 , VGS = 20 V0 V
Tch 175°C, RG = 25 , VGS = 20 V0 V, Duty cycle 3%
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
0.81
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13464EJ3V0DS00 (3rd edition)
Date Published February 1999 NS CP(K)
Printed in Japan
©
1998

قانون اساسیصفحه 8
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