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IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode
IKW40N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW40N120H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.50mA
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=1.00mA,VCE=VGE
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=15.0A
min.
Value
typ.
max. Unit
1200 -
-V
-
-
2.05 2.40
2.50 -
V
- 2.70 -
- 1.80 2.35 V
- 1.85 -
-
-
2.40 3.05
2.60 -
V
- 2.60 -
5.0 5.8 6.5 V
- - 250.0 µA
- - 2500.0
- - 600 nA
- 20.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Cies
Coes
Cres
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=960V,IC=40.0A,
VGE=15V
VGE=15.0V,VCC≤600V,
tSC≤10µs
Tvj=175°C
Value
Unit
min. typ. max.
- 2330 -
- 185 - pF
- 130 -
- 185.0 - nC
- 13.0 - nH
- 139 - A
5 Rev.2.1,2014-11-26
IKW40N120H3
Highspeedswitchingseriesthirdgeneration
16
240V
960V
14
12 1000
Cies
Coes
10 Cres
8
6 100
4
2
0
0 40 80 120 160
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=40A)
10
200 0
10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
300 50
250 40
200 30
150 20
100 10
50
10
12 14 16
VGE,GATE-EMITTERVOLTAGE[V]
18
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤600V,startatTj=25°C)
0
10 12 14 16 18 20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤600V,startatTj≤150°C)
11 Rev.2.1,2014-11-26