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PDF CUR806-G Data sheet ( Hoja de datos )
| Número de pieza | CUR806-G | |
| Descripción | High Efficiency Glass Passivated Rectifiers | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CUR806-G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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High Efficiency Glass Passivated Rectifiers
CUR801-G Thru. CUR808-G
Reverse Voltage: 50 to 1000 V
Forward Current: 8.0 A
RoHS Device
Comchip
SMD Diode Specialist
Features
-Low switching noise.
-Low forward voltage drop.
-Low thermal resistance.
-High current capability.
-High fast switching capability.
-High surge capacity.
Mechanical Data
-Case: TO-220AC, molded plastic.
-Epoxy: UL 94V-0 rate flame retardant.
-Lead: MIL-STD-202E method 208C guaranteed.
-Mounting position: Any
-Weight: 2.24 grams
TO-220AC
0.135(3.44) 0.413(10.50)
0.103(2.62) 0.374( 9.50)
0.153(3.90)
0.146(3.70)
0.04 MAX
(1.0)
0.270(6.90)
0.230(5.80)
0.610(15.50)
0.583(14.80)
0.189(4.80)
0.173(4.40)
0.055(1.40)
0.047(1.20)
0.057(1.45)
0.045(1.14)
0.177 0.583(14.80)
(4.5) 0.531(13.50)
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
0.024(0.60)
0.012(0.30)
0.138
(3.50)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
CUR
801-G
CUR
802-G
CUR
803-G
CUR
804-G
CUR
805-G
CUR
806-G
CUR
807-G
CUR
808-G
Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
Rectified current
@TA=75°C
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Peak instantaneous voltage at 8.0A DC
Maximum DC reverse current
at rated DC blocking voltage
@TJ=25°C
@TJ=100°C
Typical junction capacitance (Note 2)
Typical thermal resistance
Maximum Reverse Recovery Time (Note 1)
Operating and storage temperature range
VRRM
VRMS
VDC
IO
IFSM
VF
IR
CJ
RθJA
Trr
TJ, TSTG
50
35
50
100 200 300 400 600 800 1000 V
70 140 210 280 420 560 700 V
100 200 300 400 600 800 1000 V
8.0 A
150 A
1.0 1.3 1.7 V
10 μA
150
40 pF
2.5 °C/W
60 nS
-55 ~ +150
°C
NOTES:
1. Measured with IF=0.5A, IR=1A, IRR=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BU013
Comchip Technology CO., LTD.
REV:A
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CUR806-G.PDF ] | |
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