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Numéro de référence | HU60N03 | ||
Description | 30V N-Channel MOSFET | ||
Fabricant | HAOLIN | ||
Logo | |||
1 Page
Nov 2009
HD60N03 / HU60N03
30V N-Channel MOSFET
BVDSS = 30 V
RDS(on) = 9mΩ
ID = 60 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 18.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V
100% Avalanche Tested
TO-252 TO-251
HD60N03
HU60N03
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
30
60
36.6
220
±20
230
60
11
7.0
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃)*
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.0
100
0.7
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.0
40
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Units
℃/W
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Pages | Pages 9 | ||
Télécharger | [ HU60N03 ] |
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