(PDF) BN10 Datasheet - GLASS PASSIVATED SILICON DAMPING DIODE

Número de pieza	BN10
Descripción	GLASS PASSIVATED SILICON DAMPING DIODE
Fabricantes	ETC
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No Preview Available ! BN10(2CN3,BZU1) GLASS PASSIVATED SILICON DAMPING DIODE Features: 1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weight. 4. Small high-temperature leakage. 5. Good thermal stability. 6. High reliability. 7. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Use for Store temperature Quality Class Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Voltage Average Forward Voltage Non-repeat Forward Surge Current Peak Reverse Current Peak Reverse Current Junction Temperature Reverse Recovery Time Symbols Unit T °C VRRM IF(AV) VFM VF IFSM IRM1 IRM2 Tjm trr V A V V A uA uA °C uS (Ta = 25°C ) Specifications Test Condition Rectifier, damping circuit. -55~+150 GS 50~1400 1.0 A~G: 1.8 H~J: 2.5 I=AIF(AV),A=3.1415926 1.0 I=IF(AV) Single-phase industrial frequency 30 sine half wave 10ms 10 VR=VRRM, Ta=25°C 200 VR=VRRM, Ta=125°C 150 4 VR=10V,IF=50mA,RL=75ohms SPECIFICATIONS: AB C 50V 100V 200V D 300V E 400V F 600V G 800V H 1000V IJ 1200V 1400V Outline and Dimensions: Contact: Jandy Lei Tel.: 13991730782 QQ: 1142478250 [email protected] 4 1 page

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