DataSheetWiki


uPD46184182B fiches techniques PDF

Renesas - 18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Numéro de référence uPD46184182B
Description 18M-BIT DDR II SRAM 2-WORD BURST OPERATION
Fabricant Renesas 
Logo Renesas 





1 Page

No Preview Available !





uPD46184182B fiche technique
μPD46184182B
μPD46184362B
Datasheet
18M-BIT DDR II SRAM
2-WORD BURST OPERATION
R10DS0114EJ0200
Rev.2.00
Nov 09, 2012
Description
The μPD46184182B is a 1,048,576-word by 18-bit and the μPD46184362B is a 524,288-word by 36-bit synchronous
double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The μPD46184182B and μPD46184362B integrate unique synchronous peripheral circuitry and a burst counter. All input
registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (13 x 15)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20 μs after clock is resumed.
User programmable impedance output (35 to 70 Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 4.0 ns (250 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0114EJ0200 Rev.2.00
Nov 09, 2012
Page 1 of 34

PagesPages 30
Télécharger [ uPD46184182B ]


Fiche technique recommandé

No Description détaillée Fabricant
uPD46184182B 18M-BIT DDR II SRAM 2-WORD BURST OPERATION Renesas
Renesas

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche