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PDF STGIPS30C60T-H Data sheet ( Hoja de datos )
| Número de pieza | STGIPS30C60T-H | |
| Descripción | IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGIPS30C60T-H
SLLIMM™ small low-loss intelligent molded module
IPM, 3-phase inverter - 30 A, 600 V short-circuit rugged IGBT
Datasheet - preliminary data
Applications
• 3-phase inverters for motor drives
• Air conditioners
SDIP-25L
Features
• IPM 30 A, 600 V 3-phase IGBT inverter bridge
including control ICs for gate driving and free-
wheeling diodes
• Short-circuit rugged IGBTs
• 3.3 V, 5 V, 15 V CMOS/TTL inputs
comparators with hysteresis and pull-down /
pull-up resistors
• Undervoltage lockout
• Internal bootstrap diode
• Interlocking function
• Shutdown function
• DBC leading to low thermal resistance
• Isolation rating of 2500 Vrms/min
• 4.7 kΩ NTC for temperature control
• UL recognized: UL1557 file E81734
Description
This intelligent power module provides a
compact, high performance AC motor drive in a
simple, rugged design. Combining ST proprietary
control ICs with the most advanced short-circuit-
rugged IGBT system technology, this device is
ideal for 3-phase inverters in applications such as
motor drives and air conditioners. SLLIMM™ is a
trademark of STMicroelectronics.
Order code
STGIPS30C60T-H
Table 1. Device summary
Marking
Package
GIPS30C60T-H
SDIP-25L
Packing
Tube
April 2015
DocID025530 Rev 3
1/19
www.st.com
1 page  
STGIPS30C60T-H
2 Electrical ratings
Electrical ratings
2.1
Absolute maximum ratings
Symbol
Table 3. Inverter part
Parameter
VPN Supply voltage applied between P - NU, NV, NW
VPN(surge)
VCES
Supply voltage (surge) applied between P - NU,
NV, NW
Each IGBT collector emitter voltage (VIN(1) = 0)
± IC
± ICP (2)
Each IGBT continuous collector current
at TC = 25°C
Each IGBT pulsed collector current
PTOT Each IGBT total dissipation at TC = 25°C
tscw
Short circuit withstand time, VCE = 0.5 V(BR)CES
TJ = 125 °C, VCC = Vboot= 15 V, VIN (1)= 0 - 5 V
1. Applied between HINi, LINi and GND for i = U, V, W
2. Pulse width limited by max junction temperature
Value
450
500
600
30
60
52
5
Unit
V
V
V
A
A
W
µs
Table 4. Control part
Symbol
Parameter
Value
VOUT
VCC
Vboot
VIN
Output voltage applied between
OUTU, OUTV, OUTW - GND
Low voltage power supply
Bootstrap voltage applied between
Vboot i - OUTi for i = U, V, W
Logic input voltage applied between HIN, LIN and
GND
VSD Open drain voltage
dVOUT/dt Allowed output slew rate
Vboot - 21 to Vboot + 0.3
-0.3 to +21
-0.3 to 620
-0.3 to 15
-0.3 to 15
50
Unit
V
V
V
V
V
V/ns
Symbol
VISO
Tj
TC
Table 5. Total system
Parameter
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
Power chips operating junction temperature
Module case operation temperature
Value
2500
-40 to 150
-40 to 125
Unit
V
°C
°C
DocID025530 Rev 3
5/19
19
5 Page 
STGIPS30C60T-H
Electrical characteristics
3.1.1 NTC thermistor
Symbol
R25
R125
B
T
Table 13. NTC thermistor
Parameter
Test conditions
Resistance
T = 25°C
Resistance
T = 125°C
B-constant
Operating temperature
T = 25°C to 85°C
Min. Typ. Max. Unit.
4.7 kΩ
160 Ω
3950
-40 150
K
°C
Equation 1: resistance variation vs. temperature
R(T)
=
R25
⋅
B
T-1--
e
–
2----91---8--
Where T are temperatures in Kelvins
Figure 7. NTC resistance vs. temperature
NTC [kΩ]
AM16299v1
180
160
140
120
100
80 MAX.
60
40
20 MIN.
CENTER
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 (°C)
Figure 8. NTC resistance vs. temperature (zoom)
NTC [kΩ]
AM17098v1
1.800
1.600
1.400
1.200 MAX.
1.000
0.800 CENTER
0.600
0.400
MIN.
0.200
0.000
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 (°C)
DocID025530 Rev 3
11/19
19
11 Page | ||
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