FSBB30CH60D Datasheet PDF - Fairchild Semiconductor
| Part Number | FSBB30CH60D | |
| Description | Motion SPM 3 Module | |
| Manufacturers | Fairchild Semiconductor | |
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August 2014
FSBB30CH60D
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
General Description
FSBB30CH60D is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9085 - Motion SPM® 3 Ver.5 Series Users Guide
• AN-9086 - SPM 3 Package Mounting Guide
• AN-9087 - Motion SPM® 3 Ver.5 Series Thermal
Performance Information
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSBB30CH60D
Device Marking
FSBB30CH60D
Package
SPMPA-027
Packing Type
Rail
Quantity
10
©2014 Fairchild Semiconductor Corporation
FSBB30CH60D Rev. C0
1
www.fairchildsemi.com
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Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ £ 150°C (Note 4)
TC = 25°C, TJ £ 150°C, Under 1 ms Pulse
Width (Note 4)
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per One Chip (Note 4)
Rating
450
500
600
30
60
113
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VCC Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current Sensing Input Voltage
Conditions
Applied between VCC(H), VCC(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
Rating
20
20
-0.3 ~ VCC+0.3
-0.3 ~ VCC+0.3
2
-0.3 ~ VCC+0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ Operating Junction Temperature
Conditions
TC = 25°C, TJ £ 150°C (Note 4)
TC = 25°C, TJ £ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
Non-repetitive, < 2 ms
See Figure 2
60 Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
(Note 5)
Inverter IGBT part (per 1 / 6 module)
Inverter FWD part (per 1 / 6 module)
-
-
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Typ. Max.
- 1.10
- 2.10
Unit
°C / W
°C / W
©2014 Fairchild Semiconductor Corporation
FSBB30CH60D Rev. C0
5
www.fairchildsemi.com
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