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2SC3734LT1 fiches techniques PDF

WEJ - NPN EPITAXIAL SILICON TRANSISTOR

Numéro de référence 2SC3734LT1
Description NPN EPITAXIAL SILICON TRANSISTOR
Fabricant WEJ 
Logo WEJ 





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2SC3734LT1 fiche technique
RoHS
2SC3734LT1
NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR
DOF FM/VHF TUNER
High Current Gain Bandwidth
.,LTProduct fT=1100MHz
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
CO Unit:mm
ICABSOLUTE MAXIMUM RATINGS
Characteristic
NCollector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
OCollector Current
Collector Dissipation Ta=25 oC*
RJunction Temperature
TStorage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
30
15
5
50
225
150
-55~150
(Ta=25 oC)
Unit
V
V
V
mA
mW
O
C
O
C
Electrical Characteristics
(Ta=25 oC)
CParameter
Symbol MIN. TYP. MAX. Unit
Condition
ECollector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
LEmitter-Base Breakdown Voltage
Collector-Base Cutoff Current
EEmitter-Base Cutoff Current
DC Current Gain
JCollector-Emitter Saturation Voltage
Collector-Base Capacitance
ECollector-Gain-Bandwidth Product
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
Cob
fT
30 V IC=100 A IE=0
15 V IC=1mA IB=0
5 V IE=100 A IC=0
50 nA VCB=12V, VE=0
50 nA VCB=3V, IC=0
28 100 300
VCB=5V, IC=1mA
0.5 V IC=10mA, IB=1mA
1.3 1.7 PF VCB=10V, IE=10,f=1MHz
700 1100
MHz VCE=5V, IC=5mA
W*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SC3734LT1=J8
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]

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