(PDF) 2SD2908 Datasheet - NPN EPITAXIAL SILICON TRANSISTOR

Número de pieza	2SD2908
Descripción	NPN EPITAXIAL SILICON TRANSISTOR
Fabricantes	WEJ
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No Preview Available ! RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain Collector-emitter saturation voltage ETransition frequency LCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test conditions Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN TYP MAX UNIT 50 V 20 V 6V 0.5 µA 0.5 µA 120 390 1V 150 MHz 30 pF ECLASSIFICATION OF hFE(1) JRank ERange WMarking Q 120-270 AHQ R 180-390 AHR WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 1 page

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PDF 2SD2908 Data sheet ( Hoja de datos )