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V20WL45-M3 fiches techniques PDF

Vishay - Trench MOS Barrier Schottky Rectifier

Numéro de référence V20WL45-M3
Description Trench MOS Barrier Schottky Rectifier
Fabricant Vishay 
Logo Vishay 





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V20WL45-M3 fiche technique
www.vishay.com
V20WL45-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5 A
TMBS®
TO-252 (D-PAK)
K
NC
A
V20WL45
NC K
A HEATSINK
FEATURES
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
45 V
IFSM
VF at IF = 20 A (TA = 125 °C)
180 A
0.48 V
TJ max.
Package
150 °C
TO-252 (D-PAK)
Diode variation
Single die
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Operating junction and storage temperature range
TJ, TSTG
V20WL45
45
20
180
-40 to +150
UNIT
V
A
A
°C
Revision: 04-Dec-13
1 Document Number: 89977
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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