DataSheetWiki


1SS226 fiches techniques PDF

WEJ - DIODE

Numéro de référence 1SS226
Description DIODE
Fabricant WEJ 
Logo WEJ 





1 Page

No Preview Available !





1SS226 fiche technique
RoHS
1SS226 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures
TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current
IF : 100 mA
Reverse Voltage
VR : 80V
OOperating and storage junction temperature range
Tj, Tstg : -55 oC to +150 oC
1
1.
2.4
1.3
SOT-23
3
2
ONIC CMarking:C3
Unit:mm
TRELECTRICAL CHARACTERISTICS
o
C(Ta=25 C unless otherwise specified)
Parameter
Symbol
EReverse breakdown voltage
V(BR)
LReverse Voltage leakage current
IR
EForward Voltage
JDiode Capacitance
WEReverse Recovery Time
VF
Ctot
trr
Test Condition
IR=100 A
VR=80V
IF=100mA
VR=0V f=1MHz
IF=IR=10mA
Irr=0.1IR
MIN. MAX. Unit
80 V
0.5 A
1.2 V
3 pF
4 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]

PagesPages 2
Télécharger [ 1SS226 ]


Fiche technique recommandé

No Description détaillée Fabricant
1SS220 (1SS220 / 1SS221) SILICON SWITCHING DIODES NEC
NEC
1SS226 SILICON EPITAXIAL PLANAR DIODE Toshiba Semiconductor
Toshiba Semiconductor
1SS226 SILICON EPITAXIAL PLANAR DIODE SEMTECH
SEMTECH
1SS226 Switching Diodes LGE
LGE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche