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Taiwan Semiconductor - 350 mW High Speed SMD Switching Diode

Numéro de référence TS4148RWG
Description 350 mW High Speed SMD Switching Diode
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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TS4148RWG fiche technique
Small Signal Product
TS4148 RWG
Taiwan Semiconductor
350 mW High Speed SMD Switching Diode
FEATURES
- Designed for mounting on small surface
- Extremely thin / leadless package
- High mounting capability, strong surage with stand,
high reliability
- Pb free version and RoHS compliant
- Halogen free
MECHANICAL DATA
- Case: 1005
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 6 mg (approximately)
1005
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak
Forward Surge Current
Pulse Width=1μs
Pulse Width=1ms
Thermal Resistance
(Note 1)
Junction and Storage Temperature Range
PD
VRSM
VRRM
IFRM
IO
IFSM
RθJA
TJ , TSTG
350
100
75
300
150
4.0
1.0
500
-40 to +125
PARAMETER
SYMBOL
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
(Note 2)
IF=50mA
VR=20V
VR=75V
VR=0, f=1.0MHz
(Note 3)
V(BR)
VF
IR
CJ
trr
Note 1: Valid provided that electrodes are kept at ambient temperature
Note 2: Test condition: IR=100μA
Note 3: Test condition: IF=IR=30mA, RL=100, IRR=3mA
MIN
-
-
-
-
MAX
75
1.0
25
2.5
4.0
4
UNIT
mW
V
V
mA
mA
A
oC/W
oC
UNIT
V
V
nA
μA
pF
ns
Document Number: DS_S1412021
Version: E14

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