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VS-10CDH06-M3 fiches techniques PDF

Vishay - Hyperfast Rectifier

Numéro de référence VS-10CDH06-M3
Description Hyperfast Rectifier
Fabricant Vishay 
Logo Vishay 





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VS-10CDH06-M3 fiche technique
www.vishay.com
VS-10CDH06-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt®
K
1
2
Top View
Bottom View
TO-263AC (SMPD)
K
Cathode
Anode 1
Anode 2
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM / CCM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr
TJ max.
Diode variation
TO-263AC (SMPD)
2x5A
600 V
1V
35 ns
175 °C
Dual die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in PFC, boost, in the
AC/DC section of SMPS, freewheeling and clamp diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
Non-repetitive peak surge current
per device
per diode
SYMBOL
VRRM
IF(AV)
IFSM
TEST CONDITIONS
Tsolder pad = 153 °C
TJ = 25 °C, 6 ms square pulse
VALUES
600
10
5
110
60
UNITS
V
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
Forward voltage, per diode
VBR,
VR
VF
IR = 100 μA
IF = 5 A
IF = 5 A, TJ = 150 °C
600
-
-
Reverse leakage current, per diode
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance, per diode
CT VR = 600 V
-
TYP.
-
1.2
1
-
15
6
MAX.
-
1.5
1.25
3
150
-
UNITS
V
μA
pF
Revision: 10-Feb-15
1 Document Number: 95808
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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