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Numéro de référence | ACE2308E | ||
Description | N-Channel MOSFET | ||
Fabricant | ACE Technology | ||
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ACE2308E
N-Channel 30-V MOSFET
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25℃
TA=70℃
Pulse Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating Temperature / Storage Temperature
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol Limit
VDS 30
VGS ±12
3.5
ID 2.8
IDM 15
IS 1.9
1.3
PD 0.8
TJ/TSTG -55/150
Units
V
V
A
A
A
W
OC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
100
166
Units
OC/W
Packaging Type
SOT-23-3
D
GS
VER 1.1 1
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Pages | Pages 6 | ||
Télécharger | [ ACE2308E ] |
No | Description détaillée | Fabricant |
ACE2308E | N-Channel MOSFET | ACE Technology |
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