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ACE2308E fiches techniques PDF

ACE Technology - N-Channel MOSFET

Numéro de référence ACE2308E
Description N-Channel MOSFET
Fabricant ACE Technology 
Logo ACE Technology 





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ACE2308E fiche technique
ACE2308E
N-Channel 30-V MOSFET
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
Power Routing
Li Ion Battery Packs
Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25
TA=70
Pulse Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating Temperature / Storage Temperature
*1 Pw 10 μs, Duty cycle 1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol Limit
VDS 30
VGS ±12
3.5
ID 2.8
IDM 15
IS 1.9
1.3
PD 0.8
TJ/TSTG -55/150
Units
V
V
A
A
A
W
OC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
100
166
Units
OC/W
Packaging Type
SOT-23-3
D
GS
VER 1.1 1

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