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Numéro de référence | KTA1663 | ||
Description | PNP Transistor | ||
Fabricant | WEJ | ||
Logo | |||
1 Page
RoHS
KTA1663
KTA1663 TRANSISTOR (PNP)
DFEATURES
Power dissipation
TPCM: 0.5 W (Tamb=25℃)
Collector current
.,LICM: -1.5
Collector-base voltage
A
V(BR)CBO: -35
V
Operating and storage junction temperature range
OTJ, Tstg: -55℃ to +150℃
1
2
3
SOT-89
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
NCollector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Ic=-1mA, IE=0
IC= -10mA , IB=0
IE=-1mA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
-35
-30
-5
-0.1
-0.1
V
V
V
µA
µA
CDC current gain
ECollector-emitter saturation voltage
LBase-Emitter saturation votage
ETransition frequency
JCoolletor Output Capacitance
HFE VCE=-2V, IC= -500mA 100
VCE(sat) IC=-1.5A, IB= -30mA
VBE VCE=-2V, IC=500mA
f T VCE= -5V, IC=- 50mA 80
Cob VCB=-10V, IE=0,f=1MHZ
320
-2.0
-1.0
50
V
MHz
pF
ECLASSIFICATION OF hFE
Rank
WRange
O
100-200
Y
160-320
Marking
HO HY
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Pages | Pages 1 | ||
Télécharger | [ KTA1663 ] |
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