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AP0103GMT-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP0103GMT-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP0103GMT-HF fiche technique
Advanced Power
Electronics Corp.
AP0103GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D
SO-8 Compatible with Heatsink
Low On-resistance
G
RoHS Compliant & Halogen-Free
S
Description
AP0103 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS@Tj=125oC
RDS(ON)
ID
40V
2.55mΩ
140A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS@Tj=125oC Drain-Source Voltage
40 V
VGS Gate-Source Voltage
+20 V
ID@TC=25
ID@TA=25
ID@TA=70
IDM
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
140
34.6
27.7
200
A
A
A
A
PD@TC=25
Total Power Dissipation
83.3 W
PD@TA=25
EAS
Total Power Dissipation
Single Pulse Avalanche Energy4
5W
28.8 mJ
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change without notice
Value
1.5
25
Units
/W
/W
1
201501052

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