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Pan Jit International - NPN HIGH FREQUENCY TRANSISTOR

Numéro de référence MMBTH10
Description NPN HIGH FREQUENCY TRANSISTOR
Fabricant Pan Jit International 
Logo Pan Jit International 





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MMBTH10 fiche technique
MMBTH10
NPN HIGH FREQUENCY TRANSISTOR
This device is designed for VHF/UHF amplifier applications and high output
VHF oscillators.
3
COLLECTOR
SPECIFICATION FEATURES
Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz
Collector Currents up to 50mA
Industry Standard SOT-23 Package
APPLICATIONS
Low Noise VHF/UHF Amplifiers and Mixers
Low Frequency Drift, High Output Oscillators
1
BASE
2
EMITTER
1
2
SOT-23
3
MAXIMUM RATINGS
TJ= 25°C
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V CE0
V CB0
V EB0
IC
PD
TJ
Tstg
Value
25
30
3.0
50
225
-55 to 150
-55 to 150
Units
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance - Junction to Ambient (Note 1)
Symbol
R th JA
Value
556
Units
°C/W
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
4/18/2006
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www.panjit.com

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