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XP1043-QH fiches techniques PDF

MA-COM - Power Amplifier

Numéro de référence XP1043-QH
Description Power Amplifier
Fabricant MA-COM 
Logo MA-COM 





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XP1043-QH fiche technique
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Features
32 dBm Saturated RF Power
41 dBm Output IP3 Linearity
17 dB Gain Control
On-Chip Power Detector
Lead-Free 4 mm 24-lead PQFN Package
100% RF Testing
RoHS* Compliant and 260°C Reflow Compatible
Description
The XP1043-QH is a packaged linear power
amplifier that operates over the 12.0-16.0 GHz
frequency band. The device provides 21.5 dB gain
and 41 dBm Output Third Order Intercept Point
(OIP3) across the band and is offered in an industry
standard, fully molded 4x4mm QFN package. The
packaged amplifier is comprised of a three stage
power amplifier with an integrated, temperature
compensated on-chip power detector. The device
includes on-chip ESD protection structures and DC
by-pass capacitors to ease the implementation and
volume assembly of the packaged part. The device
is manufactured in GaAs pHEMT device technology
with BCB wafer coating to enhance ruggedness and
repeatability of performance. This device is specially
designed for use in Point-to-Point Radio systems for
cellular backhaul applications, and is well suited for
other telecom applications such as SATCOM and
VSAT.
Ordering Information
Part Number
XP1043-QH-0G00
XP1043-QH-0G0T
XP1043-QH-EV1
Package
bulk quantity
tape and reel
evaluation module
Rev. V1
Functional Schematic
nc GND GND VD1 VD2 VD3
GND
GND
nc
RF IN
GND
GND
1
2
3
4
5
6
18 GND
17 GND
16 nc
15 RF OUT
14 nc
13 nc
VG1 VG2 VG3 nc Vdet Vref
Pin Configuration
Pin No.
1-2
3
4
5-6
7
8
9
10
11
12
Function
Ground
Not Connected
RF Input
Ground
Gate 1 Bias
Gate 2 Bias
Gate 3 Bias
Not Connected
Pwr Det
Pwr Det Ref
Pin No.
13-14
15
16
17-18
19
20
21
22-23
24
Function
Not Connected
RF Output
Not Connected
Ground
Drain 3 Bias
Drain 2 Bias
Drain 1 Bias
Ground
Not Connected
Absolute Maximum Ratings 1,2
Parameter
Absolute Max.
Supply Voltage (Vd1,2,3)
+8.0 V
Supply Current (Id1,2,3)
1500 mA
Gate Bias Voltage (Vg1,2,3)
-2.4 V
Max Power Dissipation (Pdiss)
5.5W
RF Input Power
+19 dBm
Operating Temperature (Ta)
-55 °C to +85 °C
Storage Temperature (Tstg)
-65 °C to +150 °C
Channel Temperature (Tch)
165 °C
MSL Level (MSL)
MSL3
ESD Min.-Machine Model (MM)
Class A
ESD Min.-Human Body Model (HBM)
Class 1A
(1) Minimum specifications are set under nominal (typ.) bias conditions.
Bias can be adjusted higher to achieve greater linearity and power;
however, maximum total power dissipated is specified at 5.5 W
(2) Channel temperature directly affects a device’s MTTF. Channel
1 temperature should be kept as low as possible to maximize lifetime.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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