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Numéro de référence | RU16P8M4 | ||
Description | P-Channel Advanced Power MOSFET | ||
Fabricant | Ruichips | ||
Logo | |||
RU16P8M4
P-Channel Advanced Power MOSFET
Features
• -16V/-8A,
RDS (ON) =40mΩ(Typ.)@VGS=-4.5V
RDS (ON) =65mΩ(Typ.)@VGS=-2.5V
• Super High Dense Cell Design
• Fast Switching Speed
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Swtich
• Battery Charge
• DC/DC Converters
Pin Description
G
D
D
S
D
PIN1
S
D
D
SDFN2020
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=-4.5V)
ID②
Continuous Drain Current@TA(VGS=-4.5V)③
Maximum Power Dissipation@TC
PD
③
Maximum Power Dissipation@TA
S
P-Channel MOSFET
Rating
Unit
TC=25°C
-16
±12
150
-55 to 150
-14
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
-56
-14
-9
-8
-5.6
17.8
7.1
2.5
1.6
A
A
W
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
www.ruichips.com
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Pages | Pages 8 | ||
Télécharger | [ RU16P8M4 ] |
No | Description détaillée | Fabricant |
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