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RU1H35K fiches techniques PDF

Ruichips - N-Channel Advanced Power MOSFET

Numéro de référence RU1H35K
Description N-Channel Advanced Power MOSFET
Fabricant Ruichips 
Logo Ruichips 





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RU1H35K fiche technique
RU1H35K
N-Channel Advanced Power MOSFET
Features
• 100V/40A,
RDS (ON) =21mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High Speed Power Switching
GDS
TO251
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
±25
175
-55 to 175
40
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
160 A
40
A
30
97
W
48
1.55 °C/W
100 °C/W
90 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com

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