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Número de pieza | RU1HP55R | |
Descripción | P-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU1HP55R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU1HP55R
P-Channel Advanced Power MOSFET
Features
• -100V/-55A,
RDS (ON) =40mΩ(Typ.)@VGS=-10V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
•Inverters
Pin Description
G D S TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TC=25°C
-100
±25
175
-55 to 175
-55
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-220
-55
-39
176
88
0.85
62.5
A
A
W
°C/W
°C/W
400 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com
1 page RU1HP55R
Typical Characteristics
Output Characteristics
50
-10V
40
-8V
-6V
30
20
-4V
10
-3V
0
01234
-VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=-10V
ID=-55A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=40mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
5000
4000
Frequency=1.0MHz
3000
Ciss
2000
1000
Coss
Crss
0
1 10 100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
5
Drain-Source On Resistance
150
120
90
60
-10V
30
0
0
100
20 40 60 80
-ID - Drain Current (A)
100
Source-Drain Diode Forward
10 TJ=175°C
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=-80V
IDS=-55A
8
7
6
5
4
3
2
1
0
0 50 100 150
QG - Gate Charge (nC)
200
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU1HP55R.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU1HP55R | P-Channel Advanced Power MOSFET | Ruichips |
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