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PDF CR100-8 Data sheet ( Hoja de datos )
| Número de pieza | CR100-8 | |
| Descripción | Sensitive Gate Silicon Controlled Rectifiers | |
| Fabricantes | Apollo Electron | |
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CR100-8
Sensitive Gate Silicon Controlled Rectifiers
Symbol
○ 3. Anode
▼
○ 2.Gate
1.Cathode ○
BVDRM = 600V
IT(RMS) = 1.0A
ITSM = 10A
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 1.0 A )
◆ Low On-State Voltage (1.3V(Typ.))
General Description
TO-92
1
2
3
Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as
small motor control, gate driver for large thyristor, sensing and detecting circuits.
We supply IGT=30㎂~100㎂ level products for customer's special requirement.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz
half sine wave : TC = 83 °C
All Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA = 25 °C, pulse width ≤ 1.0㎲
TA = 25 °C, t = 8.3ms
TA = 25 °C, pulse width ≤ 1.0㎲
TA = 25 °C, pulse width ≤ 1.0㎲
Ratings
600
0.5
1.0
10
0.415
2
0.1
1
5.0
- 40 ~ 110
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/5
1 page  
CR100-8
TO-92 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 4.2
0.165
B 3.7 0.146
C 4.43
4.83 0.174
0.190
D 14.07
14.87
0.554
0.585
E 0.4 0.016
F 4.43
4.83 0.174
0.190
G 0.45 0.017
H 2.54
0.100
I 2.54
0.100
J 0.33
0.48 0.013
0.019
A
E
B
F
C
G
1
D2
3
HI
1. Cathode
2. Gate
3. Anode
J
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CR100-8.PDF ] | |
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