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PDF 2SD1760 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1760 | |
| Descripción | NPN Epitaxial Planar Silicon Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SD1760
3A , 60V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A)
Complements the 2SB1184
D-Pack (TO-252)
CLASSIFICATION OF hFE
Product-Rank 2SD1760-P 2SD1760-Q
Range
82~180
120~270
2SD1760-R
180~390
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13’ inch
Collector
Base
Emitter
A
BC
D
GE
K HF
MJ
N
O
P
Millimeter
Millimeter
REF. Min. Max. REF. Min. Max.
A 6.4 6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9
1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
60
50
5
3
1.5
150
-55 ~ 150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit
Collector-base breakdown voltage
V(BR)CBO
60
-
-
V
Collector-emitter breakdown voltage
V(BR)CEO
50
-
-
V
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
V
Collector cut-off current
ICBO - - 1 μA
Emitter cut-off current
IEBO - - 1 μA
DC current gain
hFE 82 - 390
Collector-emitter saturation voltage
VCE(sat)
-
- 1V
Transition frequency
fT - 90 - MHz
Collector Output Capacitance
COB - 40 - pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
VCE=3V, IC=500mA
IC=2A, IB=200mA
VCE=5V, IC=500mA, f=30MHz
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
28-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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| PDF Descargar | [ Datasheet 2SD1760.PDF ] | |
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