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PDF 2SD1766 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1766 | |
| Descripción | NPN Epitaxial Planar Silicon Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SD1766
2A, 40V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SD1766 is suited for the output stage of 0.5W audio,
voltage regulator, and relay driver.
CLASSIFICATION OF hFE
Product Rank 2SD1766-P
Range
82~180
Marking
DBP
2SD1766-Q
120~270
DBQ
2SD1766-R
180~390
DBR
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7’ inch
1
Base
SOT-89
4
123
A
EC
B
F
Collector
2
G
H
J
D
K
L
1. Base
2. Collector
3. Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
40
32
5.0
2.0
0.5
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Symbol
V(BR)CBO
V(BR)CEO
Min.
40
32
Typ.
-
-
Max.
-
-
Unit
V
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
5.0
-
-
-
-
-
-
-V
1 µA
1 µA
DC current gain
hFE 82 - 390
Collector-emitter saturation voltage VCE(sat)
-
- 0.8 V
Transition frequency
f T - 100 - MHz
Output Capacitance
COB - 30 - pF
Test Conditions
IC= 50 µA, IE=0
IC= 1 mA, IB=0
IE= 50 µA, IC=0
VCB= 20 V, IE=0
VEB= 4 V, IC=0
VCE= 3 V, IC= 0.5 A
IC= 2 A, IB= 0.2 A
VCE=5V, IE=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
04-Nov-2014 Rev. A
Any changes of specification will not be informed individually.
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