DataSheet.es    


PDF MTB060N06I3 Data sheet ( Hoja de datos )

Número de pieza MTB060N06I3
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo



Hay una vista previa y un enlace de descarga de MTB060N06I3 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! MTB060N06I3 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date :
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTB060N06I3 BVDSS
ID
RDSON(MAX)@VGS=10V, ID=10A
RDSON(MAX)@VGS=5V, ID=8A
60V
16A
35mΩ(typ.)
40mΩ(typ.)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB060N06I3
Outline
TO-251
GGate DDrain
SSource
G DS
Ordering Information
Device
Package
Shipping
MTB060N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB060N06I3
CYStek Product Specification

1 page




MTB060N06I3 pdf
CYStech Electronics Corp.
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2 ID=250μA
1
0.8
100
10
0.1
C oss
Crss
1 10
VDS, Drain-Source Voltage(V)
100
0.6
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
Gate Charge Characteristics
10
VDS=20V
8
VDS=50V
6
1
0.1
0.01
VDS=5V
Pulsed
Ta=25°C
0.1 1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
100
RDSON
Limited
10μ s
10 100μs
1
TC=25°C, Tj=150°C
0.1 VGS=10V
Single Pulse
1ms
10ms
100ms
DC
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
4
2 ID=10A
0
0 4 8 12 16
Qg, Total Gate Charge(nC)
20
18
16
14
12
10
8
6
4
2
0
25
Maximum Drain Current vs Case Temperature
VGS=10V
50 75 100 125 150
TC, Case Temperature(°C)
175
MTB060N06I3
CYStek Product Specification

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet MTB060N06I3.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MTB060N06I3N-Channel Enhancement Mode Power MOSFETCYStech
CYStech

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar