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MTB1D7N03J3 fiches techniques PDF

CYStech - N-Channel Enhancement Mode Power MOSFET

Numéro de référence MTB1D7N03J3
Description N-Channel Enhancement Mode Power MOSFET
Fabricant CYStech 
Logo CYStech 





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MTB1D7N03J3 fiche technique
CYStech Electronics Corp.
Spec. No. : C948J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB1D7N03J3
BVDSS
ID@VGS=10V, TC=25°C
30V
60A
ID@VGS=10V, TA=25°C
20.6A
RDS(ON)@VGS=10V, ID=20A 2.0 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 2.3 mΩ(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB1D7N03J3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTB1D7N03J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1D7N03J3
CYStek Product Specification

PagesPages 9
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