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KI007P fiches techniques PDF

Kexin - P-Channel MOSFET

Numéro de référence KI007P
Description P-Channel MOSFET
Fabricant Kexin 
Logo Kexin 





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KI007P fiche technique
SMD Type
P-Channel MOSFET
KI007P
Features
VDS (V) =-12V
ID =-3.5 A
RDS(ON) 65mΩ (VGS =-4.5V , ID=-1A)
RDS(ON) 100mΩ (VGS =-2.5V , ID=-0.5A)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
MOSFET
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=25
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
PD
TJ
Tstg
Rating
-12
±12
3.5
1
150
-55 to 150
Unit
V
A
W
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
Test Conditions
ID=-250μA, VGS=0V
VDS=-12V, VGS=0V,TJ=25
VDS=0V, VGS=±12V
VDS=VGS ID=-250μA
VGS=-4.5V, ID=-1A
VGS=-2.5V, ID=-0.5A
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
Marking
Marking
007P
Min Typ Max Unit
-12 V
-1 uA
±100 nA
-0.5 -1.3 V
65
100
mΩ
77
120
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